Enhanced resistive switching performance in bilayer Pt/TiO₂/Co₃O₄/Pt memory device

In this work, the bilayer Pt/TiO _2 /Co _3 O _4 /Pt and single-layer Pt/TiO _2 /Pt memory devices were fabricated for investigating their resistive switching characteristics. The statistical switching parameters revealed the enhanced resistive switching performance in the bilayer Pt/TiO _2 /Co _3 O _4 /Pt device, for instance, more centralized operating voltages and current, as well as lower power consumption. The analysis of conductive mechanisms showed that the Schottky emission and Ohmic mechanisms were responsible for the OFF and ON states of the Pt/TiO _2 /Co _3 O _4 /Pt memory devices. The conductive filament mode combined with the fitting results of conductive mechanisms was used to illustrate the resistive switching effect, which provided a microscopic model for a deeper understanding of switching behavior in bilayer devices. Our results indicated that switching properties of TiO _2 -based resistive random access memory (RRAM) could be improved by inserting a Co _3 O _4 layer.