Resistive switching characteristics of ZnO/a-TiO 2 bilayer film fabricated on PET/ITO transparent and flexible substrates
Source abstract
Abstract
Abstract Resistance random access memory consisting of ZnO/TiO 2 /Cu structure is demonstrated on a flexible and transparent PET/ITO substrate. To improve cell to cell uniformity, amorphous TiO 2 fabricated by atomic layer deposition is used for resistive switching material with ZnO film as a blocking layer. XRD, SEM and AFM measurements were used to analyze the composition and structure of the ZnO/TiO 2 films. XPS spectra and depth profile of the ZnO/TiO 2 structure were thoroughly investigated to verify the chemical composition of the films. Resistive switching characteristics were measured and conduction mechanism was analyzed according to above analysis.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · CCD and CMOS Imaging Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (20)
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