Microwave dielectric properties and microstructures of CuO- and ZnO-doped LaAlO3 ceramics

Abstract The microwave dielectric properties and the microstructures of 0.25 wt.% CuO-doped LaAlO 3 ceramics with ZnO additions have been investigated. The sintered LaAlO 3 ceramics are characterized by X-ray diffraction spectra and scanning electron microscopy (SEM). Tremendous reduction in sintering temperature can be achieved with the addition of sintering aids CuO and ZnO. The ceramic samples show that dielectric constants ( e r ) of 22−24 and Q × f values of 33,000−57,000 (at 9.7 GHz) can be obtained at low sintering temperatures 1340−1460°C. The temperature coefficient of resonant frequency varies from −24 to −48 ppm/°C. At the level of 0.25 wt.% CuO and 1 wt.% ZnO additions, LaAlO 3 ceramics possesses a dielectric constant ( e r ) of 23.4, a Q × f value of 57,000 (at 9.7 GHz) and a τ f value of −38 ppm/°C at 1400°C for 2 h.