Planar defects in layered hydroxides: Simulation and structure refinement of β-nickel hydroxide

Abstract Although nickel hydroxide can be obtained by various methods in a highly ordered form, this work shows that most such preparations are not free of stacking faults. The stacking faults belong to more than one type, which differ from one another in their structure as described by the local stacking sequence. The incidence of such residual stacking faults varies in the range 1–3% depending on the method of preparation.