journal article·2011-09

Thermoelectric properties of Zn4Sb3 prepared by hot pressing

J.H. Ahn, M.W. Oh, B.S. Kim, S.D. Park, B.K. Min, H.W. Lee, Y.J. Shim

Materials Research Bulletin· Volume 46· Issue 9
Publisher page

Abstract

Abstract Polycrystalline specimens of the thermoelectric material Zn4Sb3 were prepared by the hot-pressing method at various temperatures and pressures and their thermoelectric properties were evaluated in a temperature range from 298 K to 673 K. A single phase of Zn4Sb3 was obtained in the samples prepared at 673 K with a pressure above 150 MPa, whereas ZnSb was placed in the Zn4Sb3 matrix for the samples prepared at 100 MPa. The electrical transport properties of the single phase compound showed p-type conduction and metallic transport behavior based on the temperature dependence. The sample produced at 673 K under a pressure of 200 MPa exhibited the highest ZT value of 1.36 at 673 K. This study suggests that the dense and single-phase Zn4Sb3 compound is a route to achieve a high thermoelectric performance.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Advanced Thermodynamics and Statistical Mechanics · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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