Comparative study of scintillation and optical properties of Ga2O3 doped with ns2 ions
Source abstract
Abstract
Abstract Ga2O3 crystals doped with nominally 1% ns2 ions (In, Tl, Sn, Pb, Sb and Bi) were synthesized by the Floating Zone (FZ) method, and we systematically evaluated the optical and scintillation properties. The peak emission was observed around 2.8 eV in photoluminescence (PL) under the excitation energy of 4.68 eV and around 3.0 eV in scintillation under X-ray irradiation. The PL and scintillation decay times were approximated by a sum of three exponential decay functions; and the derived decay times ranged several tens of nanoseconds, hundreds of nanoseconds and several microseconds. The slowest component was ascribed to the nsnp-ns2 transitions while the fastest and intermediate components were blamed for the defect-related emission. Among the present samples, Sn-doped Ga2O3 showed the highest scintillation light yield.
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Research context
OpenAlex topics: Ga2O3 and related materials · Luminescence Properties of Advanced Materials · Radiation Detection and Scintillator Technologies
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