Capacitance and conductance characterization of nano-ZnGa2Te4/n-Si diode
Source abstract
Abstract
Abstract Capacitance–voltage (C–V) and conductance–voltage (G–V) characteristics of p-ZnGa2Te4/n-Si HJD were studied over a wide frequency and temperature. Both the interface states density Nss and series resistance Rs were strongly frequency and temperature dependent. The interface states density Nss is decreased with increasing frequency and increase with increasing temperature. The values of the built-in potential (Vbi) were calculated and found to increase with increasing temperature and frequency. The values of capacitance C, conductance G, series resistance Rs, corrected capacitance CADJ, corrected conductance GADJ, dielectric constant (ɛ′), dielectric loss (ɛ″), loss tangent (tan δ) and the AC conductivity (σac) are strongly dependent on the applied frequency, voltage and temperature. The obtained results show that the locations of Nss and Rs have a significant effect on the electrical characteristics of the studied diode.
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Research context
OpenAlex topics: Semiconductor materials and interfaces · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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