Preparation and thermochromic properties of Ce-doped VO2 films

Abstract Mixture of cerium (III) nitrate hexahydrate and vanadium pentaoxide powder were used as precursor to prepare Ce-doped VO2 films on the muscovite substrate by inorganic sol–gel method. SEM, XRD and XPS were used to investigate the morphologies and structures of VO2 films. The results show that the VO2 films grow on the muscovite substrate with preferred orientated (0 1 1) plane and the Ce exists in the form of Ce4+ and Ce3+ replacing part of V atoms in the lattice. The infrared transmittance change was measured from room temperature to the temperature above the metal–insulator transition. The films have excellent thermochromic performance. The metal–insulator transition temperature of VO2 films changes appreciably with Ce doped, which decreases by 4.5 °C per 1 at.% doping. Furthermore, Ce doping could remarkably reduce the particle size of VO2 films.