Effect of argon ion irradiation on Sb2Te3 films in a dense plasma focus device
Source abstract
Abstract
Abstract The effect of argon ion irradiation on vacuum-evaporated as-grown Sb 2 Te 3 films in a dense plasma focused device (DPF) was studied by structural, compositional, and morphological analyses. The as-grown films consisted of both stoichiometric and nonstoichiometric Sb 2 Te 3 phases with traces of Te. Ion energy greater than 1 MeV promoted the formation of nonstoichiometric Sb x Te 1−x phase and the oxidation of Sb. Ion energy less than 1 MeV promoted the formation of single stoichiometric Sb 2 Te 3 phase and a homogeneous distribution of grain size with preferred orientation.
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Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (27)
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