Structural, electrical and optical properties of Bi2Se3 and Bi2Se(3−x)Tex thin films

Thin films of Bi{sub 2}Se{sub 3}, Bi{sub 2}Se{sub 2.9}Te{sub 0.1}, Bi{sub 2}Se{sub 2.7}Te{sub 0.3} and Bi{sub 2}Se{sub 2.6}Te{sub 0.4} are prepared by compound evaporation. Micro structural, optical and electrical measurements are carried out on these films. X-ray diffraction pattern indicates that the as-prepared films are polycrystalline in nature with exact matching of standard pattern. The composition and morphology are determined using energy dispersive X-ray analysis and scanning electron microscopy (SEM). The optical band gap, which is direct allowed, is 0.67 eV for Bi{sub 2}Se{sub 3} thin films and the activation energy is 53 meV. Tellurium doped thin films also show strong optical absorption corresponding to a band gap of 0.70-0.78 eV. Absolute value of electrical conductivity in the case of tellurium doped thin film shows a decreasing trend with respect to parent structure.