journal article·2026-02

A comparative high-temperature electrical study of single crystal and amorphous ZnGa2O4 as a gate dielectric in β-Ga2O3 MOSCAP devices

N. Manikanthababu, Subrata Karmakar, Ishtiaq Firoz Shiam, Injamamul Hoque Emu, Ariful Haque, Ravi Droopad

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OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques

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