Multiple site occupancies of Eu3+ in differently oriented ZnMgO:Eu epilayers
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: ZnO doping and properties · Luminescence Properties of Advanced Materials · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (59)
Show source-provided references
1. The Promise and Challenge of Solid-State Lighting10.1063/1.1445547 ↗
2. Toward Smart and Ultra-efficient Solid-State Lighting10.1002/adom.201400131 ↗
3. Solid state lighting review – Potential and challenges in Europe10.1016/j.rser.2014.02.029 ↗
4. A perspective perception on the applications of light-emitting diodes10.1002/bio.2919 ↗
5. Rare earth (RE) doped phosphors and their emerging applications: A review10.1016/j.ceramint.2021.03.308 ↗
6. Recent developments in rare-earth doped materials for optoelectronics10.1016/S0079-6727(02)00014-9 ↗
7. Photo- and electro-luminescence of rare earth-doped semiconducting zinc oxide electrodes: Emission from both the dopant and the support10.1016/0022-2313(91)90044-V ↗
8. A Review on Optical Applications, Prospects, and Challenges of Rare-Earth Oxides10.1021/acsaelm.1c00682 ↗
9. Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices10.1002/adma.202006230 ↗
10. ZnO: Material, Physics and Applications10.1002/cphc.200700002 ↗
11. ZnO: From basics towards applications10.1002/pssb.200743072 ↗
12. A comprehensive review of ZnO materials and devices10.1063/1.1992666 ↗
13. Tailoring of composition, band-gap, and structural phase in ZnMgO films by simply controlling growth temperature and oxygen partial pressure during sputter deposition10.1016/j.jallcom.2017.03.131 ↗
14. MgxZn1-xO as a II–VI widegap semiconductor alloy10.1063/1.121384 ↗
15. Bandgap tunability and local structure of MgxZn1-xO (0 ≤ x ≤ 1) thin films grown by RF magnetron co-sputtering10.1007/s00339-022-05797-2 ↗
16. Homoepitaxial ZnO/ZnMgO Laser Structures and Their Properties
17. Interpretation of europium(III) spectra10.1016/j.ccr.2015.02.015 ↗
18. Development of red phosphor Li8CaLa2Ta2O13:Eu3+ for WLEDs and anti-counterfeiting applications10.1016/j.chphma.2023.11.002 ↗
19. Electroluminescence from europium(III) complexes10.1016/j.ccr.2015.02.018 ↗
20. Enhanced red emission from Eu-implanted ZnMgO layers and ZnO/ZnMgO quantum structures10.1063/5.0060961 ↗
21. Photoluminescence of Europium in ZnO and ZnMgO thin films grown by Molecular Beam Epitaxy10.1016/j.jlumin.2022.119167 ↗
22. Eu3+ Luminescence Enhancement via Bandgap Engineering of Zn1-xMgxO:Eu Epitaxial Thin Films10.1021/acsaom.3c00207 ↗
23. Luminescence of Erbium Implanted in Various Semiconductors: IV, III-V and II-VI Materials10.1049/el:19890486 ↗
24. Energy Transfer10.1007/978-3-642-79017-1_5 ↗
25. Epitaxial growth of ZnO films10.1016/j.pcrysgrow.2005.01.003 ↗
26. Non-polar a-plane ZnMgO/ZnO quantum wells grown by molecular beam epitaxy10.1088/0268-1242/23/3/035005 ↗
27. Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire10.1063/1.1412572 ↗
28. Strong enhancement of red photoluminescence from Eu doped Ga2O3 films by thermal annealing10.1016/j.jlumin.2022.118858 ↗
29. Properties of ZnO/ZnMgO nanostructures grown on r-plane Al2O3 substrates by molecular beam epitaxy10.1016/j.jallcom.2015.07.171 ↗
30. Surface-orientation-dependent growth of SrRuO3 epitaxial thin films10.1016/j.apsusc.2019.143924 ↗
31. Effect of deposition temperature on the microstructure and surface morphology of c-axis oriented AlN films deposited on sapphire substrate by RF reactive magnetron sputtering10.1016/j.spmi.2012.08.003 ↗
32. Ab Initio Hartree-Fock Simulation of R-Plane Sapphire10.1016/j.phpro.2012.03.611 ↗
33. GaAs epitaxial growth on R-plane sapphire substrate10.1016/j.jcrysgro.2020.125848 ↗
34. X-ray analysis of thin films and multilayers10.1088/0034-4885/59/11/001 ↗
35. Growth of MgO thin films on M-, A-, C- and R-plane sapphire by laser ablation10.1088/0022-3727/32/15/304 ↗
36. Comparison of structural, optical and electrical properties of undoped ZnO thin films grown on r- and c- Al2O3 substrates using pulsed laser deposition10.1016/j.spmi.2005.08.024 ↗
37. Strain distribution in MgxZn1-xO layers with various content of Mg grown on a-plane sapphire by plasma-assisted molecular beam epitaxy10.1016/j.apsusc.2017.01.218 ↗
38. The photoluminescence properties of undoped & Eu-doped ZnO thin films grown by RF sputtering on sapphire and silicon substrates10.1016/j.apsusc.2015.10.151 ↗
39. Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy10.1063/1.3065535 ↗
40. Theoretical and experimental investigations of vertical hole transport through unipolar AlGaN structures: Impacts of random alloy disorder10.1063/5.0006291 ↗
41. Polar and Non-Polar Zn1-xMgxO:Sb Grown by MBE10.3390/ma15238409 ↗
42. Pulsed laser deposition of a ZnO:Eu3+ thin film: Study of the luminescence and surface state under electron beam irradiation10.1016/j.apsusc.2019.144281 ↗
43. The Eu3+ charge transfer energy and the relation with the band gap of compounds10.1016/j.jlumin.2004.07.003 ↗
44. The charge-transfer absorption band of Eu3+ in oxides10.1016/0022-4596(75)90242-X ↗
45. Some misconceptions concerning the electronic spectra of tri-positive europium and cerium10.1039/c3cs60033e ↗
46. The doping site analysis and control of Eu3+ in ZnO:Eu crystal lattice10.1016/j.jlumin.2018.08.038 ↗
47. Optical spectroscopy of Eu3+ doped ZnO nanocrystals10.1021/jp077001z ↗
48. Correlations between the structural transformations and concentration quenching effect for RE-implanted ZnO systems10.1016/j.apsusc.2020.146421 ↗
49. Eu3+ luminescence properties of Eu- and Mg-codoped AlGaN10.1016/j.jlumin.2015.04.036 ↗
50. Identification of the prime optical center in GaN: Eu3+10.1103/PhysRevB.81.085209 ↗
51. Present understanding of Eu luminescent centers in Eu-doped GaN grown by organometallic vapor phase epitaxy10.7567/JJAP.53.05FA13 ↗
52. Spectroscopic and energy transfer studies of Eu3+ centers in GaN10.1063/1.2783893 ↗
53. The Luminescent Inhomogeneity and the Distribution of Zinc Vacancy-Related Acceptor-Like Defects in N-Doped ZnO Microrods10.1186/s11671-016-1736-7 ↗
54. Influence of oxygen-rich and zinc-rich conditions on donor and acceptor states and conductivity mechanism of ZnO films grown by ALD-Experimental studies10.1063/1.5120355 ↗
55. Localized excitons mediate defect emission in ZnO powders10.1063/1.4798359 ↗
56. Defect roles in the excitation of Eu ions in Eu:GaN10.1364/OE.21.030633 ↗
57. Energy transfer between Eu3+ ions in a lattice with two different crystallographic sites: Y2O3:Eu3+, Gd2O3:Eu3+ and Eu2O310.1016/0022-2313(87)90177-3 ↗
58. Radiative and multiphonon relaxation of rare-earth ions in Y2O310.1103/PhysRev.171.283 ↗
59. Modified radiative lifetime of Eu3+ ions in Y2O3 thin films on Al2O3 substrates10.1016/j.jlumin.2020.117754 ↗