Sulfur vacancy defect control: Favorable impact on the photodetection performance of MoS2/WSe2 van der Waals heterojunction
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OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · MXene and MAX Phase Materials
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References (61)
Show source-provided references
1. Self-driven and thermally resilient highly responsive nano-fenced MoS2 based photodetector for near-infrared optical signal10.1016/j.materresbull.2023.112260 ↗
2. MoS2-based nanocomposites toward electromagnetic wave absorption10.1016/j.materresbull.2024.112732 ↗
3. Universal mechanical exfoliation of large-area 2D crystals10.1038/s41467-020-16266-w ↗
4. Nature and origin of unusual properties in chemically exfoliated 2D MoS2
5. Pollution-Free interface of 2D-MoS2/1D-CuO vdWs heterojunction for high-performance photodetector10.1088/1361-6528/ad0411 ↗
6. Controllable defects implantation in MoS2 grown by chemical vapor deposition for photoluminescence enhancement10.1007/s12274-018-1999-7 ↗
7. Defect passivation and photoluminescence enhancement of monolayer MoS2 crystals through sodium halide-assisted chemical vapor deposition growth10.1021/acsami.9b19224 ↗
8. Air-stable n-doping of WSe2 by anion vacancy formation with mild plasma treatment10.1021/acsnano.6b02521 ↗
9. Strain-induced sulfur vacancies in monolayer MoS210.1021/acsmaterialslett.3c00507 ↗
10. One-Step Passivation of both sulfur vacancies and SiO2 interface traps of MoS2 device10.1021/acs.nanolett.3c01753 ↗
11. Healing donor defect states in CVD-grown MoS2 field-effect transistors using oxygen plasma with a channel-protecting barrier10.1002/smll.202305143 ↗
12. Deciphering vacancy defect evolution of 2D MoS2 for reliable transistors10.1021/acsami.3c07806 ↗
13. Rational passivation of sulfur vacancy defects in two-dimensional transition metal dichalcogenides10.1021/acsnano.1c01220 ↗
14. J. Thiruraman, P. Das, M. Drndic, Irradiation of transition metal dichalcogenides using a focused ion beam: controlled single-atom defect creation, Adv. Funct. Mater. 29 (2019) 1904668.10.1002/adfm.201904668 ↗
15. Role of sulfur vacancies and undercoordinated Mo regions in MoS2 nanosheets toward the evolution of hydrogen10.1021/acsnano.9b01583 ↗
16. Low defect density in MoS2 monolayers grown on Au (111) by metal-organic chemical vapor deposition10.1016/j.micron.2024.103708 ↗
17. Surface defects on natural MoS210.1021/acsami.5b01778 ↗
18. Oxygen atom adsorbed on the sulphur vacancy of monolayer MoS2: a promising method for the passivation of the vacancy defect10.1016/j.comptc.2020.112906 ↗
19. Electronic and optical properties of sulfur vacancy-defect monolayer PtS2: a first-principles study10.1016/j.matchemphys.2020.123588 ↗
20. Thiol-based defect healing of WSe2 and WS2, Npj 2D Mater
21. Surface defects on natural MoS210.1021/acsami.5b01778 ↗
22. Impact of intrinsic atomic defects on the electronic structure of MoS2 monolayers10.1088/0957-4484/25/37/375703 ↗
23. S. Najmaei, J. Yuan, J. Zhang, P. Ajayan, J. Lou, Synthesis and defect investigation of two-dimensional molybdenum disulfide atomic layers, Acc. Chem. Res. 48 (2015) .10.1021/ar500291j ↗
24. Probing sulfur vacancies in CVD-Grown monolayer MoS2 on SiO2/Si in the temperature range 750-900 °C10.1007/s11664-023-10463-1 ↗
25. S. Feng, J. Tan, S. Zhao, S. Zhang, U. Khan, L. Tang, X. Zou, J. Lin, H. Cheng, B. Liu, Synthesis of ultrahigh-quality monolayer molybdenum disulfide through in situ defect healing with thiol molecules, Small. 16 (2020) 2003357.10.1002/smll.202003357 ↗
26. Carrier mobility tuning of MoS2 by strain engineering in CVD growth process10.1007/s12274-020-3228-4 ↗
27. Gas sensing of ordered and disordered structure SiO2 and their adsorption behavior based on quartz crystal microbalance10.1016/j.snb.2019.127479 ↗
28. T. Bucko, S. Lebegue, J. Hafner, J. Angyan, Improved density dependent correction for the description of london dispersion forces, J. Chem. Theory. Comput. 9 (2013) 4293–4299.10.1021/ct400694h ↗
29. Shape evolution of monolayer MoS2 crystals grown by chemical vapor deposition10.1021/cm5025662 ↗
30. Anomalous lattice vibrations of single and few-layer MoS2, ACS
31. Raman spectroscopy of the interlayer shear mode in few-layer MoS2 flakes10.1063/1.4751266 ↗
32. Reduced defect density in MOCVD-grown MoS2 by manipulating the precursor phase10.1021/acsami.3c09027 ↗
33. Engineering chemically active defects in monolayer MoS2 transistors via ion-beam irradiation and their healing via vapor deposition of alkanethiols10.1002/adma.201606760 ↗
34. The effect of the experimental parameters on the growth of MoS2 flakes10.1039/C8CE00733K ↗
35. The optical properties of few-layer MoS2 by DFT calculations10.1016/j.physe.2023.115813 ↗
36. Spatially selective enhancement of photoluminescence in MoS2 by exciton-mediated adsorption and defect passivation10.1021/acsami.9b00390 ↗
37. L. Tyulnev, A. Jiménez, J. Poborska, L. Vamos, P. Russell, F. Tani, O, Smirnova, M. Lvanov, R. Silva, J. Biegert, Valleytronics in bulk MoS2 with a topologic optical field, Nature (2024) 746–751.10.1038/s41586-024-07156-y ↗
38. An improved method for controllable growth of monolayer WSe2 and its optical characterization
39. Direct bilayer growth: a new growth fundamental for novel WSe2 homo-junction and bilayer WSe2 growth10.1039/C9NR09874G ↗
40. Y. Zheng, Z. Xu, K. Shi. J.Li, X. Fang, Z.Jiang, X. Chu, A high-performance WS2/ZnO QD heterojunction photodetector with charge and energy transfer, J. Mater. Chem C 12 (2024) 18291–18299.10.1039/D4TC03659J ↗
41. Self-powered p-GaN/i-ZnGa2O4/n-ITO heterojunction broadband ultraviolet photodetector with high working temperature10.1109/LED.2023.3262755 ↗
42. A self-powered flexible UV photodetector based on an individual ZnO-amorphous Ga2O3 core-shell heterojunction microwire10.1039/D4TC01327A ↗
43. MoS2/WSe2 vdW heterostructures decorated with PbS quantum dots for the development of high-performance photovoltaic and broadband photodiodes10.1021/acsnano.2c02012 ↗
44. Electrical rectifying and photosensing property of schottky diode based on MoS210.1021/acsami.8b06078 ↗
45. Strong polarization sensitivity in a two-dimensional MoS2/WSe2 heterojunction for self-powered photodetection
46. Polarization-sensitive self-powered MoS2/α-GaN heterojunction photodetectors for ultraviolet polarized imaging10.1063/5.0215741 ↗
47. High-performance self-powered photodetectors based on TMD Alloy/GaAs van der waals heterojunctions for infrared light communication10.1109/LED.2024.3440996 ↗
48. Highly efficient 1D p-Te/2D n-Bi2Te3 heterojunction self-driven broadband photodetector10.1007/s12274-023-5905-6 ↗
49. High-performance flexible photodetectors based on CdTe/MoS2 heterojunction10.1039/D4NR01718H ↗
50. A photodetector based on p-GaN/N-MoS2 QDs heterojunction with high responsivity10.1088/2053-1591/ad22b6 ↗
51. Plasmonics stimulated enhanced performance MoS2/WO3 heterojunction based broadband self-powered photodetector10.1021/acsaom.4c00066 ↗
52. NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode10.1038/s41598-021-83187-z ↗
53. Interfacial study of vertically aligned n-type MoS2 flakes heterojunction with p-type Cu-Zn-Sn-S for self-powered, fast and high performance broadband photodetector10.1016/j.apsusc.2020.145901 ↗
54. A high-performance broadband self-powered photodetector employing an MoS2/LaVO3 heterojunction structure10.1016/j.jallcom.2022.168404 ↗
55. High Response, Self-powered Photodetector Based on the Monolayer MoS2/P-Si Heterojunction with Asymmetric Electrodes10.1021/acs.langmuir.8b02171 ↗
56. MoS2/SiNWS heterostructure based repeatable and highly responsive photodetecto10.1016/j.optmat.2022.112918 ↗
57. Tunable defect-engineered nanohybrid heterostructures: exfoliated 2D WSe2-MoS2 nanohybrid sheet covered on 1D ZnO nanostructures for self-powered UV photodetectors10.1039/D3TC00844D ↗
58. Graphene/WS2/LaVO3 heterojunction for self-powered, high-speed, and broadband photodetectors10.1016/j.cap.2024.11.014 ↗
59. Paper-based MoS2/Bi2S3 heterojunction photodetectors for broadband detection and fast response10.1016/j.materresbull.2023.112606 ↗
60. Paper-based flexible photodetector functionalized by WS2/Ti3C2TX 2D-2D heterostructures10.1016/j.optmat.2024.115244 ↗
61. Self-powered broad-band photodetectors based on vertically stacked WSe2/Bi2Te3 p-n heterojunctions10.1021/acsnano.9b07563 ↗