Photothermal deflection technique investigation of thermal annealing effects of AlGaAsSb/GaSb laser structure: Non-radiative recombination parameters enhancement
Source abstract
Abstract
Abstract Photothermal deflection technique (PTD) is used to investigate the effects of thermal annealing time on nonradiative recombination parameters i.e. nonradiative lifetime of minority carriers, electronic diffusion coefficient, and surface and interface recombination velocity of AlGaAsSb/GaSb laser structure. The extraction of the electronic parameters are performed by PTD technique through extensive modeling by fitting the experimental photothermal signal to the corresponding theoretical ones. We have found that nonradiative recombination parameters have been enhanced by annealing time. These results are very promising for improvement of active layer used for vertical-cavity surface-emitting lasers (VCSELs).
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Spectroscopy and Laser Applications · Thermography and Photoacoustic Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (35)
Show source-provided references
1. Monolithically integrated mid-IR interband cascade laser and photodetector operating at room temperature10.1063/1.4964837 ↗
2. Room-temperature optically pumped laser oscillation at 2.07 μm from Ga0.85In0.15As0.13Sb0.87/Al0.4Ga0.6As0.035Sb0.965 double heterostructures grown by molecular-beam epitaxy on GaSb substrates10.1063/1.337487 ↗
3. Mid-wave interband cascade infrared photodetectors based on GaInAsSb absorbers10.1088/0268-1242/31/10/105014 ↗
4. Highly uniform high quantum efficiency GaInAsSb/AlGaAsSh double heterostructure lasers emitting at 2.2 um10.1049/el:19890387 ↗
5. Reduction of interfacial recombination in GaInAsSb/GaSb double heterostructures10.1063/1.1530743 ↗
6. Auger and radiative recombination coefficients in 0.55-eV0.55-eV InGaAsSb10.1063/1.1828609 ↗
7. Measurement of the auger recombination rate in p-type 0.54 eV GaInAsSb by time-resolved photoluminescence10.1063/1.1621455 ↗
8. Measurement of the auger lifetime in GaInAsSb/GaSb heterostructures using the photoacoustic technique10.1063/1.1383281 ↗
9. Landolt-Bornstein · 1984
10. Recombination processes in doubly capped antimonide-based quaternary thin films10.1063/1.370925 ↗
11. Efficiency enhancement of ZnO/Cu2O solar cells with well oriented and micrometer grain sized Cu2O films; single cuprous oxide films synthesized by radical oxidation at low temperature for PV application10.1063/1.5017002 ↗
12. Nitrogen doping in cuprous oxide films synthesized by radical oxidation at low temperature10.1016/j.matlet.2012.10.083 ↗
13. Photoacoustic determination of the recombination velocity at the AIGaAs/GaAs heterostructure interface10.1063/1.371676 ↗
14. Non-contacting measurements of photocarrier lifetimes in bulk- and polycrystalline thin-film Si photoconductive devices by photothermal radiometry10.1063/1.363472 ↗
15. Two-layer model for photothermal radiometry applied on semiconducting thin films10.1063/1.366507 ↗
16. Three-layer photocarrier radiometry model of ion-implanted silicon wafers10.1063/1.1748862 ↗
17. Reduction of interfacial recombination in GaInAsSb/GaSb double heterostructures10.1063/1.1530743 ↗
18. Photothermal investigation of transport in semiconductors: theory and experiment10.1063/1.336599 ↗
19. Transverse photothermal beam deflection technique for determining the transport properties of semiconductor thin films10.1063/1.3340998 ↗
20. Photothermal deflection investigation of bulk Si and GaSb transport properties10.1007/s00339-012-7242-6 ↗
21. Two-layer photo-thermal deflection model to study the non-radiative recombination process: application to Ga0.7In0.3As0.23Sb0.77/GaSb and Al0.3Ga0.7As0.08Sb0.92/GaSb laser structures10.1063/1.4803513 ↗
22. Non-radiative recombination process in BGaAs/GaAs alloys: two layer photothermal deflection model10.1016/j.jallcom.2013.07.101 ↗
23. Thermal annealing effects on AlGaAsSb/GaSb laser structure: bandgap energy blueshift and thermal conductivity enhancement10.1016/j.optmat.2017.04.050 ↗
24. Photothermal spectroscopy using optical beam probing: mirage effect
25. Determination of very thin semiconductor layer thickness by a photothermal method10.1063/1.347441 ↗
26. Characterization and simulation of GaSb device-related properties10.1109/16.822293 ↗
27. Measurement of the auger lifetime in GaInAsSb/GaSb heterostructures using the photoacoustic technique10.1063/1.1383281 ↗
28. Crystal growth and properties of binary, ternary and quaternary (in,Ga)(As,P) alloys grown by the hydride vapor phase epitaxy technique10.1016/0146-3535(81)90039-3 ↗
29. Effects of thermal annealing on the emission properties of type-II InAs/GaAsSb quantum dots10.1063/1.3062979 ↗
30. Ilahi · Interface Recombination Velocity MeAsurement SiO2/Si1 · 2014 · 48 · 302
31. Effects of thermal annealing on the band gap of GaInAsSb10.1063/1.1900946 ↗
32. Effect of annealing-induced interdiffusion on the electronic structure of mid infrared emitting GaInAsSb/AlGaInAsSb quantum Wells10.7567/JJAP.50.031202 ↗
33. Photoluminescence and band offset of type-II AlGaAsSb/InP heterostructures10.1088/0268-1242/21/5/020 ↗
34. GalnAsSb injection lasers operating near 2.1μm up to 130°C
35. Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: key properties for a variety of the 2–4‐μm optoelectronic device applications10.1063/1.338352 ↗