journal article·2021-05

Role of temperature in the growth and formation of CdxZn1-xS/PVA nanocomposites through SILAR method

L.R. Gahramanli, M.B. Muradov, O.O. Balayeva, G.M. Eyvazova, R.M. Mirsultanova

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Abstract

Abstract In this work, we present the role of reaction temperature in formation and characterization of CdxZn1-xS/PVA nanocomposites. CdxZn1-xS/PVA (x = 0.1, 0.2, 0.8) have been prepared by SILAR method. In the process of nanoparticles growth, the method of simultaneous adsorption of cations from electrolyte precursors was used. The obtained samples were investigated by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy-dispersive X-ray spectroscopy (EDX), Ultraviolet-visible spectrophotometer (UV-–VIS) and E7-20 (MNIPI-Belarus) devices. The analyses of XRD pattern show that, in room temperature with increasing of concentration of Cd2+ ions, the size of particles increasing. The mechanism of formation essentially depends from temperature of crystallization medium. The particles size were determined from XRD results by Debye Scherer equation. Dielectric and optical properties were used to characterize the final nanocomposite films before and after thermal annealing. The SEM images of sample were obtained at two different synthesis temperature. The elemental analyses used for analyses growth mechanism of ternary CdZnS nanoparticles.
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OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Copper-based nanomaterials and applications

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