Peculiarities of magnetoresistance in InSb whiskers at cryogenic temperatures

Abstract The study of the magnetoresistance in InSb whiskers with an impurity concentration in the vicinity to the metal-insulator phase transition, at low temperature range 4.2–77 K, and in fields , with induction up to 14 T , was conducted. The presence of Shubnikov-de Haas oscillations in both transverse and longitudinal magnetoresistance was observed. The following parameters of InSb whiskers were defined: period of oscillations 0.1 Т −1 , cyclotron effective mass of electrons m с ≈ 0.14 m о , concentration of charge carriers 2.3 × 10 17 сm −3 , g -factor g * ≈ 30 and Dingle temperature Т D = 14.5 K. To determine the nature of crystal defects, the electron scattering processes on the short-range potential, caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain centers and ionized impurities in n-InSb whiskers, with defect concentration 2.9 × 10 17 cm −3 , are considered. The temperature dependences of electron mobility in the range 4.2–500 K were calculated.