Photoluminescence and Raman spectroscopic analysis of PV deposited ZnS thin films
Source abstract
Abstract
Abstract Structural, optical and emission characteristics of the physical vapor deposited (PVD) ZnS films were investigated. Refined patterns of x-ray diffractogram (XRD) revealed that the grown films have zinc blende (ZB) structure with preferential orientation along (111) plane. Optical spectrograph was analyzed to derive various optical parameters, including optical band gap, which assess the device suitability of grown films. Raman spectra, fitted with Lorentzian peak, provided insight on frequency shift as an effect of elastic and thermal strains. Intensified peaks in photoluminescence spectra reflected observable recombination process due to larger band gap and assisted in study of defect-states in the grown films. In brief, the paper reports on influence of thickness and post deposition annealing on film characteristics analyzed through spectroscopic techniques.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (30)
Show source-provided references
1. CVD of nanosized ZnS and CdS thin films from single-source precursors10.1149/1.1739221 ↗
2. Phosphor geometry regulations with separated red and green quantum dot layers for high performance warm white light-emitting diodes10.1016/j.materresbull.2016.09.026 ↗
3. ZnS grain size effects on near-resonant Raman scattering: optical non-destructive grain size estimation10.1039/c3ce42578a ↗
4. Thickness effect on the microstructure, morphology and optoelectronic properties of ZnS films
5. Annealing temperature effect on the structural, optical and electrical properties of ZnS thin films10.1016/j.physb.2010.12.033 ↗
6. AFM studies on ZnS thin films grown by atomic layer epitaxy10.1016/S0169-4332(97)00226-2 ↗
7. Structural and optical characterization of magnetron sputtered ZnS thin films annealed in different athmosphere
8. Photoluminescence and Raman evidence for mechanico-chemical interaction of polyaniline-emeraldine base with ZnS in cubic and hexagonal phase10.1016/j.jssc.2011.12.012 ↗
9. Starch-assisted synthesis and optical properties of ZnS nanoparticles10.1016/j.materresbull.2016.01.046 ↗
10. Effect of GLAD technique on optical properties of ZnS multilayer antireflection coatings10.1016/j.materresbull.2017.12.037 ↗
11. Effects of thermal annealing on the properties of N-implanted ZnS film
12. A comparative study on ZnS thin films grown by thermal evaporation and magnetron sputtering
13. Growth and optical properties of stacked-pyramid zinc sulfide architectures10.1039/c1ce05212h ↗
14. Enhancement of photoluminescence in ZnS / ZnO quantum dots interfacial heterostructures10.1016/j.materresbull.2012.03.006 ↗
15. Grain growth and structural transformation in ZnS nanocrystalline thin fi lms10.1016/j.vacuum.2010.06.011 ↗
16. The Scherrer equation versus the ‘Debye – Scherrer equation
17. X-ray analysis of ZnO nanoparticles by Williamson e Hall and size e strain plot methods10.1016/j.solidstatesciences.2010.11.024 ↗
18. Structural, electrical and optical properties of ZnS films deposited by close-spaced evaporation10.1016/j.apsusc.2006.04.063 ↗
19. Preparation of ZnS thin films and ZnS / p-Si heterojunction solar cells10.1016/j.matlet.2017.03.171 ↗
20. Influences of annealing temperature and thickness on ZnS buffer layers for inverted hybrid solar cells10.1016/j.synthmet.2016.05.017 ↗
21. Computer program PARAV for calculating optical constants of thin films and bulk materials : case study of amorphous semiconductors
22. Improved microstructure and properties of CBD-ZnS thin films
23. Physical and electrical characterization of HfO 2 metal – insulator – metal capacitors for Si analog circuit applications physical and electrical characterization of HfO 2 metal – insulator – metal capacitors for Si analog circuit applications10.1063/1.1579550 ↗
24. Raman spectrum of cubic ZnS10.1103/PhysRev.182.838 ↗
25. Study of the Raman peak shift and the linewidth silicon10.1063/1.355808 ↗
26. Defect engineering of ZnS thin films for photoelectrochemical water-splitting under visible light10.1016/j.solmat.2016.04.021 ↗
27. Synthesis and photoluminescence of Mn-doped zinc sulfide nanoparticles
28. Synthesis of Wurtzite ZnS nanowire bundles using a Solvothermal technique
29. High temperature antistructure disorder in undoped ZnS10.1016/j.physb.2009.08.198 ↗
30. Fabrication of Si / ZnS radial nanowire heterojunction arrays for white light emitting devices on Si substrates fabrication of Si / ZnS radial nanowire heterojunction arrays for white light emitting devices on Si substrates