journal article·2024-02

Passivating defects in ZnO electron transport layer for enhancing performance of red InP-based quantum dot light-emitting diodes

Meijing Ning, Ke Zhao, Lijia Zhao, Sheng Cao, Jialong Zhao, Yonghui Gao, Xi Yuan

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Quantum Dots Synthesis And Properties · ZnO doping and properties · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (48)

Show source-provided references
1. Highly efficient and stable InP/ZnSe/ZnS quantum dot light-emitting diodes10.1038/s41586-019-1771-5 ↗
2. Inorganic solid phosphorus precursor of sodium phosphaethynolate for synthesis of highly luminescent InP-based quantum dots10.1021/acsenergylett.1c01067 ↗
3. Boosting electroluminescence performance of all solution processed InP based quantum dot light emitting diodes using bilayered inorganic hole injection layers10.1364/PRJ.467604 ↗
4. Highly efficient green InP-based quantum dot light-emitting diodes regulated by inner alloyed shell component10.1038/s41377-022-00855-z ↗
5. High efficiency green InP quantum dot light-emitting diodes by balancing electron and hole mobility10.1038/s43246-021-00203-5 ↗
6. High performance InP-based quantum dot light-emitting diodes via the suppression of field-enhanced electron delocalization
7. ZnF(2)-assisted synthesis of highly luminescent InP/ZnSe/ZnS quantum dots for efficient and stable electroluminescence10.1021/acs.nanolett.2c00763 ↗
8. An efficient organic and inorganic hybrid interlayer for high performance inverted red cadmium-free quantum dot light-emitting diodes10.1039/D1NA00716E ↗
9. Green InP/ZnSeS/ZnS core multi-shelled quantum dots synthesized with aminophosphine for effective display applications
10. Efficient structure for InP/ZnS-based electroluminescence device by embedding the emitters in the electron-dominating interface10.1021/acs.jpclett.0c00112 ↗
11. Inkjet-printed blue InP/ZnS/ZnS quantum dot light-emitting diodes10.1016/j.cej.2022.138413 ↗
12. Quasi-shell-growth strategy achieves stable and efficient green InP quantum dot light-emitting diodes10.1002/advs.202200959 ↗
13. Highly efficient and super stable full-color quantum dots light-emitting diodes with solution-processed all-inorganic charge transport layers
14. Enhanced device performance of quantum-dot light-emitting diodes via 2,2′-bipyridyl ligand exchange10.1016/j.orgel.2021.106326 ↗
15. A highly efficient white quantum dot light-emitting diode employing magnesium doped zinc oxide as the electron transport layer based on bilayered quantum dot layers10.1039/C8TC03014F ↗
16. Highly efficient and low turn-on voltage quantum-dot light-emitting diodes using a ZnMgO/ZnO double electron transport layer10.1016/j.cap.2021.07.001 ↗
17. solution-processed lithium-doped ZnO electron transport layer for efficient triple cation (Rb, MA, FA) perovskite solar cells10.1021/acsami.7b09153 ↗
18. Improving performance of InP-based quantum dot light-emitting diodes by controlling defect states of the ZnO electron transport layer10.1021/acs.jpcc.2c07893 ↗
19. Effect and mechanism of encapsulation on aging characteristics of quantum-dot light-emitting diodes10.1007/s12274-020-3091-3 ↗
20. An ZnMgO:PVP inorganic–organic hybrid electron transport layer: towards efficient bottom-emission and transparent quantum dot light-emitting diodes10.1039/C8TC06121A ↗
21. Stoichiometry-controlled InP-based quantum dots: synthesis, photoluminescence, and electroluminescence10.1021/jacs.8b12908 ↗
22. Enhancing the performance of quantum dot light-emitting diodes using room-temperature-processed Ga-doped ZnO nanoparticles as the electron transport layer10.1021/acsami.7b03262 ↗
23. Performance enhancement by sol-gel processed Ni-doped ZnO layer in InP-based quantum dot light-emitting diodes10.1016/j.orgel.2022.106696 ↗
24. Alleviating electron over-injection for efficient cadmium-free quantum dot light-emitting diodes toward deep-blue emission10.1021/acsphotonics.2c00155 ↗
25. High performance blue quantum dot light-emitting diodes employing polyethylenimine ethoxylated as the interfacial modifier10.1039/C7NR04542E ↗
26. High-performance quantum dot light-emitting diodes based on Al-doped ZnO nanoparticles electron transport layer10.1021/acsami.8b04754 ↗
27. Mg-Doped ZnO nanoparticle films as the interlayer between the ZnO electron transport layer and InP quantum dot layer for light-emitting diodes10.1021/acs.jpcc.0c00351 ↗
28. Boosting efficiency of InP quantum dots-based light-emitting diodes by an In-doped ZnO electron transport layer10.1109/LED.2021.3119322 ↗
29. Good charge balanced inverted red InP/ZnSe/ZnS-quantum dot light-emitting diode with new high mobility and deep HOMO level hole transport layer10.1021/acsenergylett.0c02193 ↗
30. Efficient solution-processed InP quantum-dots light-emitting diodes enabled by suppressing hole injection loss10.1007/s12274-022-5268-4 ↗
31. Molecular design of diazo compound for carbene-mediated cross-linking of hole-transport polymer in QLED with reduced energy barrier and improved charge balance10.1021/acsami.2c11108 ↗
32. Boosting the efficiency and stability of green InP quantum dot light emitting diodes by interface dipole modulation10.1039/D2TC01522F ↗
33. Inverted quantum dot light-emitting diodes with conductive interlayers of zirconium acetylacetonate10.1039/C8TC06511J ↗
34. Controlling electron transport towards efficient all-solution-processed quantum dot light emitting diodes10.1039/D2TC01182D ↗
35. Performance enhancement of InP quantum dot light-emitting diodes via a surface-functionalized ZnMgO electron transport layer10.1021/acsenergylett.2c01065 ↗
36. High-performance blue quantum dot light emitting diode via solvent optimization strategy for ZnO nanoparticles10.3390/nano11040959 ↗
37. Highly stable red quantum dot light-emitting diodes with long T95 operation lifetimes10.1021/acs.jpclett.0c00836 ↗
38. Observation and suppression of stacking interface states in sandwich-structured quantum dot light-emitting diodes10.1021/acsami.1c13052 ↗
39. ZnMgO:ZnO composite films for fast electron transport and high charge balance in quantum dot light emitting diodes10.1364/OME.8.000909 ↗
40. Composition-tailored ZnMgO nanoparticles for electron transport layers of highly efficient and bright InP-based quantum dot light emitting diodes10.1039/C9CC06882A ↗
41. Highly stable colloidal ZnO nanocrystals by MgO passivation10.1088/0022-3727/42/2/025305 ↗
42. Fabrication of Mg-doped ZnO nanofibers with high purities and tailored band gaps10.1016/j.ceramint.2016.03.105 ↗
43. Effect of Mg doping on structural, morphological, optical and thermal properties of ZnO nanoparticles
44. Sonochemical synthesis of highly luminescent zinc oxide nanoparticles doped with magnesium(II)10.1002/anie.200805590 ↗
45. Defect-related optical properties of Mg-doped ZnO nanoparticles synthesized via low temperature hydrothermal method10.1016/j.jallcom.2020.157654 ↗
46. Efficient quantum dot light-emitting diodes with a Zn0.85Mg0.15O interfacial modification layer10.1039/C7NR02099F ↗
47. Near-band-edge emission characteristics of ZnO-MgO core-shell quantum-dots10.1016/j.matlet.2016.04.164 ↗
48. Performance improvement of quantum dot-light-emitting diodes enabled by an alloyed ZnMgO nanoparticle electron transport layer10.1021/cm503756q ↗