MoO x modified ITO/a-Si:H(p) contact for silicon heterojunction solar cell application
Source abstract
Abstract
Abstract Schottky barrier is a fundamental problem when contacting n-type indium tin oxide with p-type hydrogenated amorphous silicon due to their mismatched work functions in silicon heterojunction solar cell. Here, we developed a facile and effective method to modify the electrical properties of ITO/a-Si:H(p) contact by thermal evaporation an ultrathin MoO x buffer layer. The transient photo-conductance decay measurements showed that both effective carrier lifetime and implied open-circuit voltage increased abruptly after inserting an ultrathin MoO x buffer layer, from 1.43 ms to 2.28 ms and 735 mV to 744 mV, respectively, which is mainly attributed to modification of MoO x buffer layer on the Schottky barrier at the interface of ITO/a-Si:H(p) contact. By modulating the thickness of MoO x buffer layer, the MoO x based SHJ solar cell illustrated a champion efficiency up to 21.8%, companying with an absolute V oc gain over 8 mV, and fill factor gain over 1.5%, respectively.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (29)
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