Preparation, microstructure, and improved dielectric and nonlinear electrical properties of Na1/2La1/2Cu3Ti4O12 ceramics by sol–gel method

Abstract Na 1/2 La 1/2 Cu 3 Ti 4 O 12 (NLCTO) ceramics were prepared by the sol–gel method (SG) and solid-state method (SS), and the effect of sintered temperature on microstructure and dielectric and nonlinear electrical properties has investigated. The experimental results indicated that NLCTO-SG ceramics sintered at 1090 °C for 10 h showed larger grain size, higher density and more homogeneous microstructure, especially higher dielectric constant up to ca 1.3–1.8 × 10 4 , lower dielectric loss of about 0.057 and better temperature stability than NLCTO-SS counterparts. However, the good low-voltage varistor behavior and the third kind of dielectric relaxation behavior could not be observed from the NLCTO-SS ceramics. The higher dielectric constant of the NLCTO-SG ceramics may be due to the stronger internal barrier layer capacitor (IBLC) effect. Two values of grain activation energy were obtained above room temperature for the first time. The transition temperature of two values was basically coincident with that of sudden changes of the dielectric properties.