Effects of sulfurization time and H 2 S concentration on electrical properties of Cu 2 ZnSnS 4 films prepared by sol–gel method
Source abstract
Abstract
Abstract Cu2ZnSnS4 (CZTS) thin films have been successfully deposited by a sol–gel method and sulfurization process. The properties of the films were investigated by varying sulfurization time and H2S concentration. X-ray diffraction and Raman spectra analyses revealed the formation of CZTS films with a tetragonal type kesterite structure. With increasing the sulfurization time and H2S concentration, the intensity of the kesterite (1 1 2) peak became sharper. The stoichiometric ratios of the CZTS films were different from the precursors, which was due to Sn loss during the sulfurization process. The electrical resistivity and mobility of the films increased while the carrier concentration decreased with increasing the sulfurization time. The CZTS thin films sulfurized at 5% H2S concentration for 90 min had the best opto-electrical properties with Eg of 1.41 eV, resistivity of 3.64 Ω cm, carrier concentration of 1.11 × 1018 cm−3 and mobility of 1.54 cm2/(V s) at room temperature for PV application.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (25)
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