Fabrication of efficient CuS/BiVO4 p-n heterojunctions for sensing and photo-reduction of Cr (VI)
Source abstract
Abstract
Abstract Applications in sensing and photo reduction of Cr (VI) by pristine BiVO4 are restricted because of the narrow band gap and easy electron-hole recombination. To overcome the issue, CuS is coupled to BiVO4indifferent molar ratios (1:1, 1:2, and 2:1) by hydrothermal synthesis and used in Cr (VI) sensing and photo-reduction. The tetragonal zircon phase of BiVO4 and hexagonal structure of CuS have been confirmed through XRD. Then n-type and p-type behavior of BiVO4 and CuS respectively have been shown from a Mott-Schotky study. The Current–Voltage characteristics of all the samples were found to be linear and ohmic in nature. The conduction and valence band position of BiVO4 (+0.33 eVand +3.08 eV) and CuS (-0.30 eV and +1.81 eV) ensures the development of p-n heterojunction and channelization of the photo-induced charge carriers. This helps in decreasing electron-hole recombination, thereby increasing the sensing efficiency (99%) and photo-reduction (98%) of Cr (VI) at a concentration of 40 ppm.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Photocatalysis Techniques · Gas Sensing Nanomaterials and Sensors · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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