Extraordinarily high ultraviolet photodetection by defect tuned phosphorus doped ZnO thin film on flexible substrate
Source abstract
Abstract
Abstract Phosphorus (P) doped zinc oxide (ZnO) thin film has skillfully been deposited on flexible substrate using radio frequency sputtering technique at room temperature under controlled oxygen ambient to tune its point defects. P doped ZnO film shows a very high ultraviolet (UV) photosensitivity with responsivity and detectivity values of 23.5 mA/W and 1.86 × 1013 Jones respectively as compared to the values of 0.073 mA/W and 2.56 × 1010 Jones respectively for pristine ZnO. Incorporation of P dopant under controlled oxygen ambient results in a very low dark current value due to acceptor-donor compensation leading to an unprecedentedly ultra-high photo-to-dark current ratio of 2.15×105 under 350 nm illumination. A photosensitivity under repetitive flat and bending conditions has been attained. Further, photoresponse towards a low intensity UV illumination of power 29 μW/cm2 has been noted with a photo-to-dark current ratio of 3.88 × 103 indicating an excellent photodetection efficiency of the P doped ZnO film.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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