Preparation and characterization of indium doped CdS0.2Se0.8 thin films by spray pyrolysis

The CdS{sub 0.2}Se{sub 0.8} and indium doped CdS{sub 0.2}Se{sub 0.8} thin films have been deposited onto the amorphous glass and fluorine doped tin oxide coated glass substrates by spray pyrolysis. The doping concentration of indium has been optimized by photoelectrochemical characterization technique. The structural, surface morphological, optical and electrical properties of CdS{sub 0.2}Se{sub 0.8} and indium doped CdS{sub 0.2}Se{sub 0.8} thin films have been studied. X-ray diffraction studies reveal that the films are polycrystalline in nature with hexagonal crystal structure. Scanning electron microscopy studies reveal that the grains are uniform with uneven spherically shaped, distributed over the entire substrate surface. The complete surface morphology has been changed after doping. In optical studies, the transition of the deposited films is found to be direct allowed with optical energy gaps decreasing from 1.91 to 1.67 eV with indium doping. Semiconducting behavior has been observed from resistivity measurements. The thermoelectric power measurements reveal that the films exhibit n-type conductivity.