Unraveling the electrical properties of solution-processed copper iodide thin films for CuI/n-Si solar cells
Source abstract
Abstract
Abstract The effects of temperature and liquid-phase iodination on the electrical property of spin coated CuI thin films have been investigated in details. The XRD study indicates that CuI thin films are polycrystalline in nature and I-doping enhances the crystal quality and size of the films. The SEM images show that the surface uniformity of the CuI thin films increases due to I-doping. The doping of iodine increases the conductivity as well as carrier concentration and mobility of the films as confirmed by Hall study. The temperature dependent resistivity of CuI film shows a sharp fall of resistivity at ˜80 °C for un-doped films whereas this behavior disappears for I-doped films. The optical transmittance and band gap of the I-doped films also increases indicating high degeneracy of the films. These findings imply that I-doped spin coated CuI thin films are potential candidates for the solution-processed CuI/n-Si solar cells.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Copper-based nanomaterials and applications · ZnO doping and properties · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (58)
Show source-provided references
1. Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%10.1038/nenergy.2017.32 ↗
2. Achievement of more than 25% conversion efficiency with crystalline silicon heterojunction solar cell10.1109/JPHOTOV.2014.2352151 ↗
3. Air-processed organic tandem solar cells on glass: toward competitive operating lifetimes10.1039/C4EE02582B ↗
4. Efficiency enhancement of InGaN/GaN solar cells with nanostructures10.1063/1.4864640 ↗
5. Laser patterning of ITO in flat panel display manufacturing, photon processing in microelectronics and photonics V, photonics west, San Jose10.1117/12.653598 ↗
6. AZO/Au/AZO multilayer as a transparent conductive electrode10.1002/pssa.201127049 ↗
7. Fabrication of GaN-based electroluminescent devices on Al substrates and their application to red, green and blue pixels for flat-panel displays10.1002/pssc.200673583 ↗
8. InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts10.1016/S0038-1101(02)00440-9 ↗
9. Room-temperature synthesized copper iodide thin film as degenerate p-type transparent conductor with a boosted figure of merit10.1073/pnas.1613643113 ↗
10. Fabrication and characterization of amorphous ITO/p-Si heterojunction solar cell10.1007/s11431-013-5287-1 ↗
11. Effect of substrate temperature on indium tin oxide (ITO) thin films deposited by jet nebulizer spray pyrolysis and solar cell application10.1016/j.mssp.2014.07.036 ↗
12. Self-compensation in semiconductors10.1103/PhysRevB.60.8138 ↗
13. Self-compensation in semiconductors: the Zn vacancy in Ga-doped ZnO10.1103/PhysRevB.84.115202 ↗
14. Crystalline-Si heterojunction with organic thin-layer (HOT) solar cell module using poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS)10.1016/j.solmat.2017.10.016 ↗
15. Improving the conductivity of PEDOT:PSS hole transport layer in polymer solar cells via copper(II) bromide salt doping10.1021/am505387q ↗
16. Self-organized gradient hole injection to improve the performance of polymer electroluminescent devices10.1002/adfm.200600278 ↗
17. Solution-processed PEDOT:PSS films with conductivities as indium tin oxide through a treatment with mild and weak organic acids10.1021/am404113n ↗
18. Optical anisotropy in solvent-modified poly(3,4- ethylenedioxythiophene):poly(styrenesulfonic acid) and its effect on the photovoltaic performance of crystalline silicon/organic heterojunction solar cells10.1063/1.4811355 ↗
19. Organic-silicon heterojunction solar cells: open-circuit voltage potential and stability10.1063/1.4827303 ↗
20. Highly efficient solution-processed poly(3,4-ethylenedioxythiophene):poly (styrenesulfonate)/crystalline-Si heterojunction solar cells with improved light-induced stability10.1002/aenm.201500744 ↗
21. Nafion-modified PEDOT:PSS as a transparent hole-transporting layer for high-performance crystalline-Si/organic heterojunction solar cells with improved light soaking stability10.1021/acsami.6b10272 ↗
22. CuI–Si heterojunction solar cells with carbon nanotube films as flexible top-contact electrodes10.1007/s12274-011-0154-5 ↗
23. High photovoltage generation at minority-carrier controlled n-Si/p-CuI heterojunction with morphologically soft CuI10.1021/jp802387t ↗
24. A facile room temperature iodination route to in-situ fabrication of patterned copper-iodide/silicon quasi-bulk-heterojunction thin films for photovoltaic application10.1039/C4DT03762F ↗
25. Solution-processed copper iodide as an inexpensive and effective anode buffer layer for polymer solar cells10.1021/jp412784q ↗
26. Perovskite solar cells with CuI inorganic hole conductor10.7567/JJAP.56.08MC04 ↗
27. Cuprous iodide: a p-type transparent semiconductor, history, and novel applications10.1002/pssa.201370056 ↗
28. Native p-type transparent conductive CuI via intrinsic defects
29. Growth strategy and physical properties of the high mobility p-type CuI crystal10.1021/cg100270d ↗
30. Defect controlled copper iodide: a promising and eco-friendly thermoelectric material10.1002/ente.201700708 ↗
31. Electrical and luminescence properties of Zn2+ doped CuI thin films
32. Thin films of copper (I) iodide doped with iodine and thiocyanate10.1002/pssa.201700520 ↗
33. Deposition of thin conducting films of CuI on glass10.1016/S0927-0248(98)00117-2 ↗
34. Truly transparent p-type γ-CuI thin films with high hole mobility10.1021/acs.chemmater.6b01358 ↗
35. Growth of CuI buffer layer prepared by spraying method10.1016/S1003-6326(11)60722-X ↗
36. Room-temperature domain-epitaxy of copper iodide thin films for transparent CuI/ZnO heterojunctions with high rectification ratios larger than 10910.1038/srep21937 ↗
37. Role of metallic dopants on the properties of copper (1) iodide nanopod-like structures10.1016/j.vacuum.2018.12.049 ↗
38. Deposition of copper iodide thin films by chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR) methods10.1016/j.cap.2013.05.014 ↗
39. The structural and optical properties of metallic doped copper (I) iodide thin films synthesized by SILAR method10.1016/j.materresbull.2017.06.032 ↗
40. Semitransparent p-CuI and n-ZnO thin films prepared by low temperature solution growth for thermoelectric conversion of near-infrared solar light10.1016/j.solener.2018.07.030 ↗
41. Investigation on the I2:CuI thin films and its stability over time10.1016/j.mee.2013.02.079 ↗
42. Development of spin-coated copper iodide on silicon for use in hole-selective contacts10.1016/j.egypro.2017.09.081 ↗
43. A method of measuring specific resistivity and Hall effect of discs of arbitrary shape
44. Electrical properties of CuI films prepared by spin coating10.1002/pssa.201329319 ↗
45. Cullity · 1972 · 102
46. Transparent conductors- a status review10.1016/0040-6090(83)90256-0 ↗
47. Greenwood · 1997 · 804
48. King · 1995 · 173
49. Effect of doping level and spray time on zinc oxide thin films produced by spray pyrolysis for transparent electrodes applications10.1016/j.sna.2006.05.001 ↗
50. Observation of microwave conductivity in copper iodide films and relay effect in the dye molecules attached to CuI photocathode10.1016/j.jssc.2005.07.015 ↗
51. Structure-property relationships in cubic cuprous iodide: A novel view on stability, chemical bonding, and electronic properties10.1063/1.4975176 ↗
52. Electrical properties of CuI and the phase boundary Cu ¦ CuI10.1016/0167-2738(94)00285-Z ↗
53. Thermal evaporated Copper Iodide (CuI) thin films: a note on the disorder evaluated through the temperature dependent electrical properties10.1016/j.solmat.2017.02.030 ↗
54. Raman scattering from CuBr and CuI10.1016/0038-1098(73)90615-7 ↗
55. The Raman spectra of the superionic conductor CuI in its three phases10.1016/0038-1098(77)91183-8 ↗
56. Transparent, conductive CuI films prepared by rf-dc coupled magnetron sputtering10.1016/0040-6090(96)08607-5 ↗
57. Carrier concentration dependence of band gap shift in n-type ZnO:Al films10.1063/1.2721374 ↗
58. Comparative study for highly Al and Mg doped ZnO thin films elaborated by sol gel method for photovoltaic application10.1063/1.4979724 ↗