Effect of fluorine (an anionic dopant) on transparent conducting properties of Sb (a cationic) doped ZnO thin films deposited using a simplified spray technique
Source abstract
Abstract
Abstract By adding fluorine, an anionic co-dopant with antimony, a cationic dopant, Sb + F doped ZnO films are prepared using a simplified spray technique and the effect of fluorine concentration (0, 5, 10 and 15 at.%) on electrical, optical, structural and surface morphological properties are studied. The results show that the resistivity of ZnO:Sb:F film decreases gradually with the increase in F doping level, reaches a minimum value of 7.27 y 10⿿3 Ωcm at 10 at.% and starts increasing thereafter. The possible mechanisms for this variation in resistivity are addressed. The optical transmittance slightly improves due to F doping. The surface morphological studies reveal that the shape and size of the grains are affected remarkably by Sb doping but not affected appreciably by the additional F doping. The XRD, XPS and EDAX analyses confirm the formation of hexagonal wurtzite ZnO structure and the presence of the expected elements in the final product.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Thin-Film Transistor Technologies · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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