Anisotropic magnetoresistance in facing-target reactively sputtered epitaxial γ′-Fe4N films
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Abstract
Abstract The negative anisotropic magnetoresistance that comes from the spin-down conduction electrons are observed in facing-target sputtered epitaxial γ ′-Fe 4 N films with different film thicknesses, substrates and orientations. Anisotropic magnetoresistance of γ ′-Fe 4 N films on LaAlO 3 (1 0 0) is larger than other substrates. The magnitude of anisotropic magnetoresistance in (1 0 0)-oriented films is always larger than (1 1 0)-oriented films. The anisotropic magnetoresistance is intimately related to the magnetocrystalline anisotropy. Fourier coefficient C 2 θ and C 4 θ of cos 2 θ and cos 4 θ terms strongly depend on the measuring temperature. No significant influence of magnetic field on C 2 θ and C 4 θ appears. The marked change of C 2 θ and appearance of C 4 θ at low temperatures are from crystal field splitting of d orbitals induced by the lattice change due to the tensile stress from substrate and the compressive stress from decreased temperatures. A. Magnetic materials; A. Nitrides; B. Epitaxial growth; D. Electrical properties
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Magnetic properties of thin films · Metal and Thin Film Mechanics · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (37)
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