Optical behaviour of sprayed tin sulphide thin films
Source abstract
Abstract
Abstract SnS films have been grown by spray pyrolysis technique on Corning 7059 glass substrates at different substrate temperatures that vary in the range of 100–450 °C, keeping the other deposition parameters constant. The optical properties of the films were systematically studied using the optical transmittance and reflectance data. The optical absorption coefficient and optical energy band gap of the films were evaluated. The variation of refractive index and extinction coefficient with photon energy for the films grown at different temperatures were studied. The SnS films grown at the substrate temperature range 300–375 °C, were showed an absorption coefficient >104 cm−1 with the energy band gap 1.32 eV, measured at room temperature. For these films, the material properties such as the dielectric constants (n, n0, k, ɛ0 and ɛ∞), plasma frequency (ωp), hole effective mass ( m h * ) and carrier density (Nopt) were also evaluated.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (41)
Show source-provided references
1. Dittrich · 1995 · 1299
2. Shalvoy · Phys. Rev. B · 1977 · 15 · 168010.1103/PhysRevB.15.1680 ↗
3. Bube · 1960
4. Ray · Thin Solid Films · 1999 · 350 · 7210.1016/S0040-6090(99)00276-X ↗
5. Valiukonis · Phys. Stat. Sol. (b) · 1986 · 135 · 29910.1002/pssb.2221350130 ↗
6. Anderson · Proc. Russ. Soc. A · 1945 · 184 · 873
7. Hass · J. Phys. Solids · 1961 · 20 · 19710.1016/0022-3697(61)90006-3 ↗
8. Parenteau · Phys. Rev. B · 1990 · 41 · 522710.1103/PhysRevB.41.5227 ↗
9. Noguchi · Sol. Energy Mater. Sol. Cells · 1994 · 35 · 32510.1016/0927-0248(94)90158-9 ↗
10. Johnson · Semicond. Sci. Technol. · 1999 · 14 · 50110.1088/0268-1242/14/6/303 ↗
11. Guang-Pu · 1994 · 365
12. Ghazali · Sol. Energy Mater. Sol. Cells · 1998 · 55 · 23710.1016/S0927-0248(98)00106-8 ↗
13. Ichimura · Thin Solid Films · 2000 · 361 · 9010.1016/S0040-6090(99)00798-1 ↗
14. Ortiz · Semicond. Sci. Technol. · 1996 · 11 · 24310.1088/0268-1242/11/2/017 ↗
15. Lopez · Semicond. Sci. Technol. · 1994 · 9 · 213010.1088/0268-1242/9/11/016 ↗
16. Price · J. Mater. Chem. · 2000 · 10 · 52710.1039/a907939d ↗
17. Kawano · J. Phys. D: Appl. Phys. · 1989 · 22 · 13610.1088/0022-3727/22/1/019 ↗
18. Yanuar · J. Mater. Sci. Lett. · 2000 · 19 · 213510.1023/A:1026778810656 ↗
19. Lopez · Semicond. Sci. Technol. · 1996 · 11 · 43310.1088/0268-1242/11/3/025 ↗
20. Thangaraju · J. Phys. D: Appl. Phys. · 2000 · 33 · 105410.1088/0022-3727/33/9/304 ↗
21. Badaway · Electrochem. Acta · 1984 · 29 · 161710.1016/0013-4686(84)89001-5 ↗
22. Lopez · Semicond. Sci. Technol. · 1994 · 9 · 110.1088/0268-1242/9/11/016 ↗
23. Koteeswara Reddy · 1997 · 515
24. Koteswara Reddy · J. Phys. D: Appl. Phys. · 1999 · 32 · 98810.1088/0022-3727/32/9/307 ↗
25. Manifacier · J. Phys. E · 1976 · 9 · 100210.1088/0022-3735/9/11/032 ↗
26. Chopra · 1969
27. Goswami · Indian J. Pure Appl. Phys. · 1975 · 13 · 508
28. Elkorashy · Phys. Stat. Sol. B · 1990 · 159 · 90310.1002/pssb.2221590238 ↗
29. El-Nahass · Opt. Mater. · 2002 · 20 · 15910.1016/S0925-3467(02)00030-7 ↗
30. Gashimzade · Inorg. Mater. · 1999 · 35 · 328
31. Manifacier · Thin Solid Films · 1977 · 41 · 12710.1016/0040-6090(77)90395-9 ↗
32. Subramanian · Mater. Chem. Phys. · 2001 · 71 · 4010.1016/S0254-0584(00)00526-5 ↗
33. Sesha Reddy · Opt. Mater. · 1995 · 4 · 78710.1016/0925-3467(95)00039-9 ↗
34. Pankove · 1971
35. Ettema · Phys. Rev. B · 1992 · 46 · 736310.1103/PhysRevB.46.7363 ↗
36. Chandrasekhar · Phys. Rev. B · 1977 · 15 · 217710.1103/PhysRevB.15.2177 ↗
37. Serway · 1997
38. Albers · J. Appl. Phys. · 1961 · 32 · 222010.1063/1.1777047 ↗
39. Gashimzade · J. Phys. Condens. Mater. · 1992 · 4 · 108110.1088/0953-8984/4/4/018 ↗
40. Kasap · 2002
41. Haitjema · Thin Solid Films · 1991 · 205 · 9310.1016/0040-6090(91)90477-F ↗