journal article·2003-05

Improved high-Q microwave dielectric resonator using CuO-doped MgNb2O6 ceramics

Cheng-Shing Hsu, Cheng-Liang Huang, Jing-Fang Tseng, Chi-Yuen Huang

Materials Research Bulletin· Volume 38· Issue 6
Publisher page

Abstract

Abstract The microwave dielectric properties and the microstructures of MgNb2O6 ceramics with CuO additions (1–4 wt.%) prepared with conventional solid-state route have been investigated. The sintered samples exhibit excellent microwave dielectric properties, which depend upon the liquid phase and the sintering temperature. It is found that MgNb2O6 ceramics can be sintered at 1140 °C due to the liquid phase effect of CuO addition. At 1170 °C, MgNb2O6 ceramics with 2 wt.% CuO addition possesses a dielectric constant (er) of 19.9, a Q×f value of 110,000 (at 10 GHz) and a temperature coefficient of resonant frequency (τf) of −44 ppm/°C. The CuO-doped MgNb2O6 ceramics can find applications in microwave devices requiring low sintering temperature.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Microwave Dielectric Ceramics Synthesis · Ferroelectric and Piezoelectric Materials · Acoustic Wave Resonator Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (10)

Show source-provided references
1. Nomura · Jpn. J. Appl. Phys. · 1982 · 21 · L62410.1143/JJAP.21.L624 ↗
2. Wolfram · Mater. Res. Bull. · 1981 · 16 · 145510.1016/0025-5408(81)90066-0 ↗
3. I. Burn, U. S. patent 4,845,062, 1989.
4. Maeda · Jpn. J. Appl. Phys. · 1987 · 26 · 7610.1143/JJAP.26.660 ↗
5. Lee · Jpn. J. Appl. Phys. · 1997 · 36 · L131810.1143/JJAP.36.L1318 ↗
6. Kakada · J. Am. Ceram. Soc. · 1994 · 77 · 190910.1111/j.1151-2916.1994.tb07070.x ↗
7. Kakada · J. Am. Ceram. Soc. · 1994 · 77 · 248510.1111/j.1151-2916.1994.tb04629.x ↗
8. Hirno · J. Am. Ceram. Soc. · 1991 · 74 · 132010.1111/j.1151-2916.1991.tb04105.x ↗
9. Tolmer · J. Am. Ceram. Soc. · 1997 · 80 · 198110.1111/j.1151-2916.1997.tb03081.x ↗
10. Kim · Jpn. J. Appl. Phys. · 1998 · 37 · 536710.1143/JJAP.37.5367 ↗