Preparation and characterization of Bi2S3 thin films using modified chemical bath deposition method
Source abstract
Abstract
Abstract A modified chemical bath deposition method is used to deposit bismuth sulphide (Bi 2 S 3 ) thin films of thickness about 0.14 μm under optimized deposition conditions. The films are annealed at 200°C for 2h in air. It is found that deposited films turn from amorphous to polycrystalline after annealing. The microstructural, optical and electrical properties of annealed films are studied. The optical band gap is estimated to be 1.78 eV. The electrical resistivity is of the order of 10 4 Ω-cm.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Advanced Semiconductor Detectors and Materials · Advanced Thermoelectric Materials and Devices
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References (13)
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