Effect of tellurium doping on the thermoelectric properties of CoSb3
Source abstract
Abstract
Abstract Polycrystalline Te-doped CoSb 3 materials with various Te content have been obtained. The scanning microscope with the electron-probe microanalysis apparatus (EPMA) and XRD technique were used to investigate microstructures and to carry out the phase analysis. The Rietveld refinement method was used for refining structure parameters and for examining tellurium distribution in the CoSb 3 structure. Thermoelectric properties have been investigated by means of the Seebeck coefficient, thermal, and electrical conductivity measurements. Optimal contents of Te for maximum figure of merit ZT have been determined.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Optical properties and cooling technologies in crystalline materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (13)
Show source-provided references
1. Dilley · Phys. Rev. · 1998 · B58 · 628710.1103/PhysRevB.58.6287 ↗
2. Morelli · Appl. Phys. · 1995 · 77 · 377710.1063/1.358552 ↗
3. Meisner · Phys. Rev. Lett. · 1998 · 80 · 355110.1103/PhysRevLett.80.3551 ↗
4. Sales · Phys. Rev. · 1997 · B65 · 1508110.1103/PhysRevB.56.15081 ↗
5. Anno · J. Appl. Phys. · 1998 · 83 · 527010.1063/1.367350 ↗
6. Morelli · Phys. Rev. · 1997 · B56 · 737610.1103/PhysRevB.56.7376 ↗
7. Kitagawa · Mater. Res. Bull. · 2000 · 35 · 18519210.1016/S0025-5408(00)00203-8 ↗
8. Caillat · J. Appl. Phys. · 1996 · 79 · 841910.1063/1.362516 ↗
9. Sharp · J. Appl. Phys. · 1995 · 78 · 101310.1063/1.360402 ↗
10. Cailat · J. Appl. Phys. · 1996 · 80 · 444210.1063/1.363405 ↗
11. Anno · J. Appl. Phys. · 1999 · 86 · 378010.1063/1.371287 ↗
12. Abrikosov · Inorg. Mater. · 1990 · 25 · 1087
13. Young · J. Appl. Crystallogr. · 1995 · 28 · 36610.1107/S0021889895002160 ↗