Ni-doped GST materials for high speed phase change memory applications

Abstract In this paper, Ni-doped Ge 2 Sb 2 Te 5 (GST) was investigated for high speed phase change memory applications. Compared with GST, Ni 0.3 Ge 2.8 Sb 2.2 Te 4.7 film exhibits a higher crystallization temperature (∼217 °C) and a better data retention ability (∼135 °C for 10 years). A reversible switching between set and reset can be realized by an electric pulse as short as 6-ns for Ni 0.3 Ge 2.8 Sb 2.2 Te 4.7 based phase change memory. Furthermore, Ni 0.3 Ge 2.8 Sb 2.2 Te 4.7 based cell shows good endurance up to 1.5 × 10 4 SET–RESET cycles during endurance test.