Orientation control of textured PZT thin films sputtered on silicon substrate with TiOx seeding

Abstract In situ deposition of Pb(Zr 0.25 Ti 0.75 )O 3 thin films by RF magnetron sputtering has been performed at 500°C on Pt/Ti/SiO 2 /Si substrates without any postannealing treatment. The growth of PZT is ensured, provided that a thin TiO x layer is sputtered prior to PZT. Moreover, we find that sputtering Ti in a 100% argon atmosphere leads to highly (100) oriented films, while adding oxygen during sputtering of Ti leads to purely (111) oriented films. Electrical measurements performed on these films show remanent polarization P r , coercive field E c , and dielectric constant consistent with their Zr/Ti ratio.