Properties of amorphous Si thin film anodes prepared by pulsed laser deposition

Amorphous Si (a-Si) thin film anodes were prepared by pulsed laser deposition (PLD) at room temperature. Structures and properties of the thin films were investigated using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and electrochemical measurements. Galvanostatic charge/discharge tests of half cells using lithium counter electrode were conducted at a constant current density of 100 {mu}A/cm{sup 2} in different voltage windows. Cyclic voltammetry (CV) was obtained between 0 and 1.5 V at various scan rates from 0.1 to 2 mV/s. The apparent diffusion coefficient (D {sub Li}) calculated from the CV measurements was about {approx}10{sup -13} cm{sup 2}/s. The Si thin film anode was also successfully coupled with LiCoO{sub 2} thin film cathode. The a-Si/LiCoO{sub 2} full cell showed stable cycle performance between 1 and 4 V.