Microstructure and electrical properties in W/Nb co-doped Aurivillius phase Bi 4 Ti 3 O 12 piezoelectric ceramics

Highlights: • W/Nb codoped BIT ceramics were prepared by the mixed oxides route. • High nd{sup 0} electronic configuration of W/Nb reduces the lattice distortion and T{sub C}. • Oxygen vacancy is responsible for dielectric relaxation and DC conduction process. • W/Nb additives significantly enhanced the piezoelectric coefficient d{sub 33} value. • BWNb-10 ceramics possessed large remnant polarization and a wide sintering window. - Abstract: Aurivillius-type Bi{sub 4}Ti{sub 3-x}W{sub x/2}Nb{sub x/2}O{sub 12} ceramics were prepared by a conventional solid-state sintering method. The XRD patterns demonstrated that all compositions were a single three layered crystalline structure, involving a reduction of lattice distortion with an increase in W/Nb doping level. The electrical properties including dielectric, electrical conduction and piezoelectric properties were tailored by W/Nb additives. The Curie-temperature decreased, whereas the electrical resistivity drastically increased with introduction of W/Nb donor dopants. As a result, a high electric field can be applied during the poling process. The Bi{sub 4}Ti{sub 2.9}W{sub 0.05}Nb{sub 0.05}O{sub 12} ceramics exhibited optimum piezoelectric coefficient (d{sub 33} ∼22.8 pC/N), large remnant polarization (2P{sub r} ∼26.8 μC/cm{sup 2} @ 200 °C) together with a high Curie temperature (T{sub C} ∼635 °C). Furthermore, this composition possessed a wide sintering window with outstanding piezoelectricmore » properties. These parameters indicate that Bi{sub 4}Ti{sub 2.9}W{sub 0.05}Nb{sub 0.05}O{sub 12}-based ceramic is a promising candidate for high temperature piezoelectric applications.« less