Deposition of CdS thin films by the successive ionic layer adsorption and reaction (SILAR) method
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Abstract
Abstract CdS thin films were prepared by the successive ionic layer adsorption and reaction (SILAR) method. The structural, optical, and electrical characterizations were carried out using X-ray diffraction, scanning electron microscopy, optical absorption, and electrical resistivity methods. The CdS films were annealed at various temperatures (373–673 K) in nitrogen atmosphere for 30 min and their structural, optical, and electrical properties are reported.
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Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Copper-based nanomaterials and applications
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References (13)
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