journal article·2007-03Open access

Optical properties of nanocrystalline SnS2 thin films

S.K. Panda, A. Antonakos, E. Liarokapis, S. Bhattacharya, S. Chaudhuri

Materials Research Bulletin· Volume 42· Issue 3

Abstract

Thin films of nanocrystalline SnS{sub 2} on glass substrates were prepared from solution by dip coating and then sulfurized in H{sub 2}S (H{sub 2}S:Ar = 1:10) atmosphere. The films had an average thickness of 60 nm and were characterized by X-ray diffraction studies, scanning electron microscopy, EDAX, transmission electron microscopy, UV-vis spectroscopy, and Raman spectroscopy. The influence of annealing temperature (150-300 deg. C) on the crystallinity and particle size was studied. The effect of CTAB as a capping agent has been tested. X-ray diffraction analysis revealed the polycrystalline nature of the films with a preferential orientation along the c-axis. Optical transmission spectra indicated a marked blue shift of the absorption edge due to quantum confinement and optical band gap was found to vary from 3.5 to 3.0 eV with annealing temperature. Raman studies indicated a prominent broad peak at {approx}314 cm{sup -1}, which confirmed the presence of nanocrystalline SnS{sub 2} phase.
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Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Phase-change materials and chalcogenides

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