Normally-off hydrogen-terminated diamond MESFET with Baliga's figure of merit of 37.5 MW/cm2
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Abstract
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Research context
OpenAlex topics: Diamond and Carbon-based Materials Research · Graphene research and applications · Advancements in Semiconductor Devices and Circuit Design
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References (16)
Show source-provided references
1. Diamond for electronics: materials, processing and devices10.3390/ma14227081 ↗
2. Hydrogen-terminated diamond 2DHG: formation mechanisms, interface engineering, and device applications—a review10.1016/j.diamond.2026.113551 ↗
3. An enhancement-mode hydrogen-terminated diamond field-effect transistor with lanthanum hexaboride gate material10.1109/LED.2020.2972330 ↗
4. High off-state voltage (4266V) diamond metal oxide semiconductor field effect transistors10.1116/6.0004552 ↗
5. 875-MW/cm2 low-resistance NO2 p-type doped chemical mechanical Planarized diamond MOSFETs10.1109/LED.2022.3164603 ↗
6. Normally-OFF two-dimensional hole gas diamond MOSFETs through nitrogen-ion implantation10.1109/LED.2019.2912211 ↗
7. Normally-off C–H diamond MOSFETs with partial C–O channel achieving 2-kV breakdown voltage10.1109/LED.2017.2661340 ↗
8. Integration of oxidized silicon- and hydrogen- terminated diamond p-channels for normally-off high-voltage diamond power devices10.1109/LED.2025.3528120 ↗
9. Leakage current reduction of normally off hydrogen-terminated diamond field effect transistor utilizing dual-barrier Schottky gate10.1063/5.0098804 ↗
10. A surface topographic investigation of {001} diamond surfaces etched in oxygen10.1080/01418610008212078 ↗
11. 345-MW/cm2 2608-V NO2 p-type doped diamond MOSFETs with an Al2O3 passivation overlayer on heteroepitaxial diamond10.1109/LED.2021.3075687 ↗
12. High voltage stress induced in transparent polycrystalline diamond field-effect transistor and enhanced endurance using thick Al2O3 passivation layer
13. 3659-V NO2 p-type doped diamond MOSFETs on Misoriented Heteroepitaxial diamond substrates10.1109/LED.2022.3226426 ↗
14. 145-MW/cm2 Heteroepitaxial diamond MOSFETs with NO2 p-type doping and an Al2O3 passivation layer10.1109/LED.2020.2997897 ↗
15. High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric
16. Field plate multi-finger diamond MOSFET with ampere-class current capability and a breakdown voltage of 550 V10.35848/1882-0786/ae49df ↗