journal article·2026-10

Pre-growth interface engineering of sputtered AlN by Al-ion implantation for low-dislocation GaN epitaxy on flat sapphire

Hongchang Tao, Huorong Wang, Shengrui Xu, Huake Su, Tao Zhang, Xu Liu, Jincheng Zhang, Yue Hao

Materials Letters· Volume 420
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Acoustic Wave Resonator Technologies · Silicon Carbide Semiconductor Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (16)

Show source-provided references
1. Su · Chin. J. Electron. · 2025 · 34 · 166110.23919/cje.2025.00.096 ↗
2. Fan · Laser Photonics Rev. · 2023 · 17
3. Zhou · Opt. Express · 2019 · 27 · A66910.1364/OE.27.00A669 ↗
4. Tao · Fundam. Res. · 2026 · 6 · 15510.1016/j.fmre.2024.03.028 ↗
5. Zhou · Opt. Lett. · 2022 · 47 · 129110.1364/OL.452477 ↗
6. Wuu · IEEE Photon. Technol. Lett. · 2005 · 17 · 28810.1109/LPT.2004.839012 ↗
7. Marchand · Appl. Phys. Lett. · 1998 · 73 · 74710.1063/1.121988 ↗
8. Zhou · Nanoscale · 2022 · 14 · 488710.1039/D1NR08221C ↗
9. Peng · IEEE Trans. Electron. Devices · 2019 · 66 · 224310.1109/TED.2019.2904110 ↗
10. Bläsing · J. Appl. Phys. · 2009 · 10510.1063/1.3074095 ↗
11. Murata · Phys. Status Solidi B · 2023 · 26010.1002/pssb.202200583 ↗
12. Mirrielees · J. Appl. Phys. · 2021 · 12910.1063/5.0048820 ↗
13. Heying · Appl. Phys. Lett. · 1996 · 68 · 64310.1063/1.116495 ↗
14. Chierchia · J. Appl. Phys. · 2003 · 93 · 891810.1063/1.1571217 ↗
15. Yue · CrystEngComm · 2021 · 23 · 687110.1039/D1CE00654A ↗
16. Zhang · J. Mater. Chem. A · 2023 · 11 · 2184610.1039/D3TA04618D ↗