Microwave absorption performance of topological insulator Bi1.5Sb0.5Te1.7Se1.3 and (Bi1.5Sb0.5)0.8Fe0.2Te1.7Se1.3

Bi2-xSbxTe3-ySey topological insulators possess outstanding electronic transport properties and simple synthesis, suitable for electronic devices. Their distinctive surface electrical transport also makes them promising for microwave absorption. In this work, single crystals of the topological insulators Bi1.5Sb0.5Te1.7Se1.3 and (Bi1.5Sb0.5)0.8Fe0.2Te1.7Se1.3 were successfully synthesized via the self-flux method. The results demonstrate that Bi1.5Sb0.5Te1.7Se1.3 achieves a minimum reflection loss (RLmin) of -24.78 dB at 17.5 GHz with a thickness of 3.2 mm, while (Bi1.5Sb0.5)0.8Fe0.2Te1.7Se1.3 exhibits a RLmin of -24.26 dB at 2.4 GHz with a thickness of 7.23 mm. Additionally, the effective absorption bandwidths are 1.52 GHz at a thickness of 3.46 mm and 1.97 GHz at a thickness of 1.55 mm, respectively. These findings provide valuable insights into the application of topological insulators in microwave absorption.