Frequency dependence of FinFETs with 3-nm HfZrO down to 5-ns based on transient CMOS inverter characteristics

In this letter, the frequency dependence of HfZrO (HZO) FinFET is experimentally studied by investigating the transient characteristics of CMOS inverters. Although the transient delay of both the inverters experience a degradation with the decrease of input pulse width, less increased transient delay of HZO FinFET compared with that of the reference is demonstrated in lower operating voltage, indicating better frequency characteristics under low operating voltage of the HZO FinFET. Furthermore, stronger driving current of HZO FinFET than that of the reference device is obtained as the input pulse width from ms down to 5ns, which experimentally demonstrated the performance enhancement of HZO FinFET under high frequency.