Effect of Ar plasma pretreatment on bonding strength of copper diffusion bonding using rapid electrical resistance heating
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OpenAlex topics: 3D IC and TSV technologies · Electronic Packaging and Soldering Technologies · Copper Interconnects and Reliability
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References (6)
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1. Effect of argon ion bombardment on the solid-state diffusion bonding of copper, scripta
2. Direct diffusion bonding of 1060Al processed by surface activation with various doses of Ar ion bombardment
3. Cleaning of diffusion bonding surface by argon ion bombardment treatment10.1016/S0168-583X(03)00732-8 ↗
4. High-vacuum Ar plasma-activated in-situ wafer bonding for low-dislocation-density Ge-on SOI heterojunction with microcrystalline Ge interlayer10.1016/j.apsusc.2025.165036 ↗
5. Rapid pulsed current diffusion bonding of 6063 Al alloy: electric-field-driven atomic diffusion
6. A review of multi-physical fields induced phenomena and effects in spark plasma sintering: fundamentals and applications