Sodium bismuth titanate nanospheres as dual-functional photocatalytic abrasives for chemical mechanical polishing of SiC
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Abstract
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Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Advanced ceramic materials synthesis · Diamond and Carbon-based Materials Research
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References (12)
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1. Polishing characteristics of MnO2 polishing slurry on the si-face of SiC wafer10.1007/s12541-018-0206-9 ↗
2. Effects of annealing treatment on the high temperature performance of 4H-SiC metal-semiconductor-metal ultraviolet photodiodes10.1016/j.mssp.2017.07.018 ↗
3. Contamination reduction for 150 mm SiC substrates by integrating CMP and post-CMP cleaning10.1088/2053-1591/ad0094 ↗
4. Electro-chemical mechanical polishing of single-crystal SiC using CeO2 slurry10.1016/j.elecom.2015.01.002 ↗
5. Effect of using high-pressure gas atmosphere with UV photocatalysis on the CMP characteristics of a 4H-SiC substrate10.1149/2162-8777/abe7a8 ↗
6. Photocatalysis assisting the mechanical polishing of a single-crystal SiC wafer utilizing an anatase TiO2-coated diamond abrasive10.1016/j.precisioneng.2017.02.011 ↗
7. Photocatalysis-assisted chemical mechanical polishing of SiC wafer using a novel SiO2@TiO2 Core-Shell composite nanoparticles slurry10.1149/2162-8777/ad048a ↗
8. Piezocatalytic performance of Na0. 5Bi0. 5TiO3 nanoparticles for degradation of organic pollutants10.1016/j.jallcom.2021.162591 ↗
9. Improved piezo/photobicatalytic performance of Na0.5Bi0.5TiO3/AgNbO3 photocatalyst through integration of multiple spontaneous polarization directions10.1016/j.jallcom.2025.181043 ↗
10. Improving the electric energy storage performance of BNT-based relaxor ferroelectric ceramics with tunable oxygen vacancies and refined grains through Sr1/2Nd1/3(Mg1/3Nb2/3)O3 dopant10.1016/j.cej.2025.165549 ↗
11. Boosting the piezo-photocatalytic performance of Na0. 5Bi0. 5TiO3 by modulating the oxygen vacancy concentration10.1016/j.jallcom.2024.174218 ↗
12. Environment-friendly chemical mechanical polishing using NaHCO3-activated H2O2 slurry for highly efficient finishing of 4H-SiC (0001) surface10.1016/j.jmapro.2023.12.014 ↗