Oxygen-engineered GeSe alloys enabling high thermal stability and low threshold voltage selectors
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OpenAlex topics: Phase-change materials and chalcogenides · Semiconductor materials and devices · Silicon and Solar Cell Technologies
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References (8)
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1. Monolithic 3D integration of 2D transistors and vertical RRAMs in 1T–4R structure for high-density memory10.1038/s41467-023-41736-2 ↗
2. Advances in ovonic threshold switch selector technologies for storage class memory: from fundamentals to development and beyond10.1002/aelm.202400665 ↗
3. Threshold resistive and capacitive switching behavior in binary amorphous GeSe10.1063/1.4714705 ↗
4. Thermally stable integrated se-based OTS selectors with >20 MA/cm2 current drive, >3.103 half-bias nonlinearity, tunable threshold voltage and excellent endurance
5. Tailoring the oxygen concentration in Ge-Sb-O alloys to enable femtojoule-level phase-change memory operations10.1088/2752-5724/aca07b ↗
6. Device-scale atomistic modelling of phase-change memory materials10.1038/s41928-023-01030-x ↗
7. Raman scattering as a probe of intermediate phases in glassy networks10.1002/jrs.1707 ↗
8. Failure analysis of Ge2Sb2Te5 based phase change memory10.1143/JJAP.47.3372 ↗