Why do oxygen-vacancies segregate to domain walls in BaTiO3?: Atomistic free-energy analysis
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Electronic and Structural Properties of Oxides · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (9)
Show source-provided references
1. Mechanisms of aging and fatigue in ferroelectrics10.1016/j.mseb.2014.10.003 ↗
2. Base-metal electrode-multilayer ceramic capacitors: past, present and future perspectives10.1143/JJAP.42.1 ↗
3. Effect of the oxygen vacancy on the ferroelectricity of 90° domain wall structure in PbTiO3: a density functional theory study10.1063/1.5125306 ↗
4. Microscopic structure and migration of 90° ferroelectric domain wall in BaTiO3 determined via molecular dynamics simulations10.1063/5.0138489 ↗
5. Depletion layers and domain walls in semiconducting ferroelectric thin films10.1103/PhysRevLett.95.247603 ↗
6. Unique temperature-dependence of polarization switching paths in ferroelectric BaTiO3: a molecular dynamics simulation study10.1016/j.actamat.2025.121216 ↗
7. First-principles study of oxygen-vacancy pinning of domain walls in PbTiO310.1103/PhysRevB.68.134103 ↗
8. Domain walls of ferroelectric BaTiO3 within the Gintzburg-Landau-Devonshire phenomenological model10.1103/PhysRevB.81.144125 ↗
9. Oxygen-vacancy mediated deterministic domain distribution at the onset of ferroelectricity10.1016/j.actamat.2025.120738 ↗