journal article·2026-01

Effects of TiN/TiSi2 buffer layer on the crystallinity and ohmicity of GaN on n-type Si (111)

Fumio Kawamura, Naoomi Yamada

Materials Letters· Volume 403
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Abstract

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OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and interfaces · Semiconductor Quantum Structures and Devices

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References (20)

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