Performance of normally-off hydrogen-terminated diamond MISFETs with high-κ Zr-Si-N/Al2O3 bilayer dielectrics
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OpenAlex topics: Diamond and Carbon-based Materials Research · Semiconductor materials and devices · Metal and Thin Film Mechanics
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References (10)
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1. Improving RF characteristic and suppress gate leakage in normally-off GaN-HEMTs using negative polarization effect and floating gate for millimeter-wave systems10.1016/j.rinp.2024.107526 ↗
2. Performance of normally off hydrogen-terminated diamond field-effect transistor with Al2O3/CeB6 gate materials
3. Atomically flat high-purity (100) diamond surfaces: Conductivity of hydrogen terminated diamond10.1016/j.diamond.2025.112181 ↗
4. Janus piezoelectric ZrSiZ3H (Z= N, P, As) semiconductors with Raman response and high carrier mobility by a first-principles investigation
5. H. Kawarada, T. Yamada, D. Xu, Y. Kitabayashi, M. Shibata, D. Matsumura, M. Kobayashi, T. Saito, T. Kudo, M. Inaba, A. Hiraiwa, Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage. 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Prague, (2016) 483–486.10.1109/ISPSD.2016.7520883 ↗
6. Electrical investigation of the silicon/diamond interface10.1016/S0167-9317(97)00057-9 ↗
7. K. Piskorski, H. M. Przewlocki, The methods to determine flat-band voltage VFB in semiconductor of a MOS structure, The 33rd International Convention MIPRO. (2010) 37–42.
8. Heterointerface properties of diamond MOS structures studied using capacitance–voltage and conductance–frequency measurements10.1016/j.diamond.2018.11.019 ↗
9. Performance of hydrogenated diamond MISFET using Zr-Si-N as the dielectric layer10.1557/adv.2017.551 ↗
10. Normally-off HfO2-gated diamond field effect transistors