Crystallographic engineering of AlN films via N2/(Ar + N2) modulation: achieving hydrogen-resistant stability in high-pressure hydrogen systems
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OpenAlex topics: Metal and Thin Film Mechanics · GaN-based semiconductor devices and materials · Advanced ceramic materials synthesis
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References (6)
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1. The role of hydrogen in altering the electrical properties of gold, titanium, and tungsten films10.1063/1.342707 ↗
2. Deposition and structural investigation of uniform AlN(100) films at wafer scale through RF magnetron sputtering10.1016/j.ceramint.2024.05.170 ↗
3. Effects of sputtering pressure on microstructure and secondary electron emission properties of AlN film prepared by magnetron sputtering10.1016/j.matlet.2024.137319 ↗
4. Impacts of substrate and growth temperature on the deposition and etching of c-axis oriented AlN piezoelectric thin films10.1016/j.scriptamat.2025.116592 ↗
5. Highly c-axis oriented AlN film grown by unbalanced magnetron reactive sputtering and its electrical properties10.1016/j.jallcom.2015.05.174 ↗
6. The evolution of preferred orientation and morphology of AlN films under various sputtering parameters10.1016/j.jcrysgro.2023.127439 ↗