journal article·2025-09

Fabrication and properties of textured ZnO-based varistor ceramics by alginate gelation and templated grain growth

Xi Jie, Jian Zhou, Guizhen Liu, Yang Gu, Zhiliang Feng, Tengfei Zhao, Zhongjun Ding

Materials Letters· Volume 395
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Abstract

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Research context

OpenAlex topics: ZnO doping and properties · Thin-Film Transistor Technologies · Chalcogenide Semiconductor Thin Films

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References (12)

Show source-provided references
2. Advances in ZnO–Bi2O3 based varistors
3. Novel zinc-oxide varistor with superior performance in voltage gradient and aging stability for surge arrester10.1016/j.jallcom.2019.02.310 ↗
4. Controlling preferred orientation and electrical conductivity of zinc oxide thin films by post-growth annealing treatment10.1016/j.apsusc.2016.01.160 ↗
5. Determining the effects of BaTiO3 template alignment on template grain growth of Pb(Mg1/3Nb2/3)O3 –PbTiO3 and effects on piezoelectric properties10.1016/j.jeurceramsoc.2022.01.062 ↗
6. A modification of tape casting for aligning the whiskers10.1023/A:1004770520830 ↗
7. Tailoring particle alignment and grain orientation during tape casting and templated grain growth10.1111/jace.16144 ↗
8. Controllable synthesis of flower- and rod-like ZnO nanostructures by simply tuning the ratio of sodium hydroxide to zinc acetate
9. Topotactical reactions with ferrimagnetic oxides having hexagonal crystal structures—I10.1016/0022-1902(59)80070-1 ↗
10. Effects of the Er2O3 doping on the microstructure and electrical properties of ZnO–Bi2O3 based varistor ceramics10.1016/j.ceramint.2021.08.132 ↗
11. Control of Ostwald ripening10.1007/s40843-022-2233-3 ↗
12. Revisiting the effects of Co2O3 on multiscale defect structures and relevant electrical properties in ZnO varistors10.1049/hve.2019.0419 ↗