journal article·2022-03

Investigation on the relationship between dislocation type and the annihilation mechanism of GaN-on-Si

Jinbang Ma, Yachao Zhang, Yifan Li, Yixin Yao, Tao Zhang, Qian Feng, Zhen Bi, Lansheng Feng, Jincheng Zhang, Yue Hao

Materials Letters· Volume 311
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OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · ZnO doping and properties

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References (12)

Show source-provided references
1. Dadgar · Appl. Phys. Lett. · 2002 · 80 · 367010.1063/1.1479455 ↗
2. Wang · J. Alloys Compd. · 2016 · 671 · 43510.1016/j.jallcom.2016.02.002 ↗
3. Huang · Appl. Surf. Sci. · 2010 · 256 · 636710.1016/j.apsusc.2010.04.018 ↗
4. Sugawara · Jpn. J. Appl. Phys. · 2016 · 55 · 05FB0810.7567/JJAP.55.05FB08 ↗
5. Dalapati · Superlattice. Microst. · 2020 · 14710.1016/j.spmi.2020.106709 ↗
6. Pan · Appl. Surf. Sci. · 2018 · 447 · 51210.1016/j.apsusc.2018.04.001 ↗
7. Bchetnia · J. Cryst. Growth · 2007 · 308 · 28310.1016/j.jcrysgro.2007.09.006 ↗
8. Bogumilowicz · J. Cryst. Growth · 2016 · 453 · 18010.1016/j.jcrysgro.2016.08.022 ↗
9. Zheng · J. Cryst. Growth · 2003 · 255 · 6310.1016/S0022-0248(03)01211-9 ↗
10. Liu · J. Appl. Phys. · 2013 · 113
11. Yang · J. Cryst. Growth · 2013 · 376
12. Gogneau · J. Appl. Phys. · 2004 · 96 · 110410.1063/1.1759785 ↗